technical data 2011, february, rev. 01 audio frequency power amplifier features low speed switching pnp epitaxial silicon transistor absolute maximum ratings tc=25c unless otherwise noted symbol parameter value units vcbo collector - base voltage - 40 v vceo co llector - emitter voltage - 30 v vebo emitter - base voltage - 5 v ic collector current (dc) - 3 a icp *collector current (pulse) - 7 a ib base current (dc) - 0.6 a pc collector dissipation (tc=25c) 10 w rja junction to ambient 1 32 c/w rjc junction to case 13.5 c/w tj junction temperature 150 c tstg storage temperature - 55 ~ 150 c * pw 10ms, duty cycle50% * stresses beyond those list ed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating conditions? is not impl ied. exposure to absolute - maximum - rated conditions for extended periods may affect device reliability. electrical characteristics tc=25c unless otherwise noted characteristics symbol unit measurement m ode min max dc current gain (1), (2) h fe v ce =2v, i c =20ma 30 dc current gain (1), (2) h fe v ce = 2v, i c = 1a 60 400 collector cut - off current i cbo a v cb = 30v, i e = 0 1.0 collector cut - off current i cbo a v cb = 40v, i e = 0 100 emitter cut - off current i ebo a v eb = 3v, i c = 0 1.0 emitter cut - off current i ebo a v eb = 5v, i c = 0 100 collector - emitter saturation voltage (1) v ce (sat) ic = 2 a, ib = 0.2 a 0.5 ic = 0.8 a, ib = 0.02 a 0.1 base - emitter saturation voltage (1) v be (sat) i c = 2 a, ib = 0.2 a 2.0 (1) pulse test : pulse width 300? . duty cycle 2% (2) measurement mode for a network with common base : vcb = 1v, ie=ic SL1001 sot - 223 SL1001 emitter 1 2 3 collector base
sl 1001 2011, february, rev. 01
sl 1001 2011, february, rev. 01
sl 1001 2011, february, rev. 01
sl 1001 2011, february, rev. 01 so t - 223
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